NTE2950 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 60A; Idm: 330A; 350W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 60A
Pulsed drain current: 330A
Power dissipation: 350W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2950 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 60A; Idm: 330A; 350W; TO262, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 60A, Pulsed drain current: 330A, Power dissipation: 350W, Case: TO262, Gate-source voltage: ±30V, On-state resistance: 12mΩ, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE2950 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 60A; Idm: 330A; 350W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 60A Pulsed drain current: 330A Power dissipation: 350W Case: TO262 Gate-source voltage: ±30V On-state resistance: 12mΩ Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |