NTE2968 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 27.8A; Idm: 180A; 278W; TO3P
Mounting: THT
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 180A
Case: TO3P
Drain-source voltage: 200V
Drain current: 27.8A
On-state resistance: 65mΩ
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2968 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 27.8A; Idm: 180A; 278W; TO3P, Mounting: THT, Type of transistor: N-MOSFET, Power dissipation: 278W, Polarisation: unipolar, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 180A, Case: TO3P, Drain-source voltage: 200V, Drain current: 27.8A, On-state resistance: 65mΩ, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2968
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE2968 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 27.8A; Idm: 180A; 278W; TO3P Mounting: THT Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 180A Case: TO3P Drain-source voltage: 200V Drain current: 27.8A On-state resistance: 65mΩ |
Produkt ist nicht verfügbar |