NTE2969 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 19A; Idm: 120A; 290W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 290W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.107Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 19A; Idm: 120A; 290W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 19A
Pulsed drain current: 120A
Power dissipation: 290W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.107Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2969 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 19A; Idm: 120A; 290W; TO3P, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 400V, Drain current: 19A, Pulsed drain current: 120A, Power dissipation: 290W, Case: TO3P, Gate-source voltage: ±30V, On-state resistance: 0.107Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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NTE2969 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 19A; Idm: 120A; 290W; TO3P Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 19A Pulsed drain current: 120A Power dissipation: 290W Case: TO3P Gate-source voltage: ±30V On-state resistance: 0.107Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |