NTE2973

NTE2973 NTE Electronics


nte2973.pdf Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P
Drain-source voltage: 900V
Drain current: 14A
On-state resistance: 0.63Ω
Type of transistor: N-MOSFET
Power dissipation: 275W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 42A
Mounting: THT
Case: TO3P
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.97 EUR
Mindestbestellmenge: 5
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Technische Details NTE2973 NTE Electronics

Description: MOSFET-N-CHAN ENHANCEMENT TO-3P, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V, Power Dissipation (Max): 275W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V.

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NTE2973 NTE2973 Hersteller : NTE Electronics nte2973.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 14A; Idm: 42A; 275W; TO3P
Drain-source voltage: 900V
Drain current: 14A
On-state resistance: 0.63Ω
Type of transistor: N-MOSFET
Power dissipation: 275W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 42A
Mounting: THT
Case: TO3P
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+15.97 EUR
Mindestbestellmenge: 5
NTE2973 NTE2973 Hersteller : NTE Electronics, Inc nte2973.pdf Description: MOSFET-N-CHAN ENHANCEMENT TO-3P
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 7A, 10V
Power Dissipation (Max): 275W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
auf Bestellung 86 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+38.06 EUR
10+ 36.17 EUR
20+ 34.27 EUR
50+ 32.34 EUR
NTE2973 Hersteller : NTE Electronics, Inc. nte2973.pdf Trans MOSFET N-CH 900V 14A 3-Pin(3+Tab) TO-3P
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+26.93 EUR
25+ 20.98 EUR
50+ 19.55 EUR
Mindestbestellmenge: 6