NTE2976 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 6A; Idm: 18A; 50W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Pulsed drain current: 18A
Power dissipation: 50W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2976 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 700V; 6A; Idm: 18A; 50W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 700V, Drain current: 6A, Pulsed drain current: 18A, Power dissipation: 50W, Case: TO220F, Gate-source voltage: ±30V, On-state resistance: 1.5Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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NTE2976 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 6A; Idm: 18A; 50W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 6A Pulsed drain current: 18A Power dissipation: 50W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |