NTE2981 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Pulsed drain current: 31A
Power dissipation: 42W
Case: TO251
Gate-source voltage: ±10V
On-state resistance: 0.38Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2981 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W; TO251, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 4.9A, Pulsed drain current: 31A, Power dissipation: 42W, Case: TO251, Gate-source voltage: ±10V, On-state resistance: 0.38Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
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NTE2981 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Pulsed drain current: 31A Power dissipation: 42W Case: TO251 Gate-source voltage: ±10V On-state resistance: 0.38Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |