NTE2988 NTE Electronics

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; Idm: 1A; 315mW; TO52, Case: TO52, Drain-source voltage: 60V, Drain current: 0.2A, On-state resistance: 7.5Ω, Type of transistor: N-MOSFET, Power dissipation: 315mW, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±15V, Pulsed drain current: 1A, Mounting: THT, Anzahl je Verpackung: 1 Stücke.