NTE2991

NTE2991 NTE Electronics


nte2991.pdf Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
14+5.21 EUR
16+ 4.69 EUR
19+ 3.86 EUR
20+ 3.66 EUR
Mindestbestellmenge: 14
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Technische Details NTE2991 NTE Electronics

Description: MOSFET PWR N-CH 55V 110A TO-220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 62A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V.

Weitere Produktangebote NTE2991 nach Preis ab 3.66 EUR bis 9 EUR

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NTE2991 NTE2991 Hersteller : NTE Electronics nte2991.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhanced
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
14+5.21 EUR
16+ 4.69 EUR
19+ 3.86 EUR
20+ 3.66 EUR
Mindestbestellmenge: 14
NTE2991 NTE2991 Hersteller : NTE Electronics, Inc nte2991.pdf Description: MOSFET PWR N-CH 55V 110A TO-220
Packaging: Bag
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 8Ohm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9 EUR
10+ 8.55 EUR
20+ 8.09 EUR
Mindestbestellmenge: 3