NTE2991 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 80A
Pulsed drain current: 390A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 36 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
14+ | 5.21 EUR |
16+ | 4.69 EUR |
19+ | 3.86 EUR |
20+ | 3.66 EUR |
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Technische Details NTE2991 NTE Electronics
Description: MOSFET PWR N-CH 55V 110A TO-220, Packaging: Bag, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 8Ohm @ 62A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V.
Weitere Produktangebote NTE2991 nach Preis ab 3.66 EUR bis 9 EUR
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NTE2991 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 80A; Idm: 390A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 80A Pulsed drain current: 390A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of channel: enhanced |
auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2991 | Hersteller : NTE Electronics, Inc |
Description: MOSFET PWR N-CH 55V 110A TO-220 Packaging: Bag Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 8Ohm @ 62A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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