NTE2995 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220
Power dissipation: 115W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 36A
Mounting: THT
Case: TO220
Drain-source voltage: 600V
Drain current: 5.7A
On-state resistance: 0.65Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.69 EUR |
| 13+ | 5.51 EUR |
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Technische Details NTE2995 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220, Power dissipation: 115W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 36A, Mounting: THT, Case: TO220, Drain-source voltage: 600V, Drain current: 5.7A, On-state resistance: 0.65Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2995 nach Preis ab 5.51 EUR bis 7.69 EUR
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NTE2995 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5.7A; Idm: 36A; 115W; TO220 Power dissipation: 115W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 36A Mounting: THT Case: TO220 Drain-source voltage: 600V Drain current: 5.7A On-state resistance: 0.65Ω Type of transistor: N-MOSFET |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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