NTE2996 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.46 EUR |
25+ | 2.86 EUR |
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Technische Details NTE2996 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 59A, Pulsed drain current: 330A, Power dissipation: 200W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 12mΩ, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2996 nach Preis ab 4.46 EUR bis 4.46 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTE2996 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 59A Pulsed drain current: 330A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of channel: enhanced |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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