NTE2997 NTE Electronics

Category: THT P channel transistors, Description: Transistor: P-MOSFET; unipolar; -160V; -7A; 100W; TO3PN, Kind of package: tube, Power dissipation: 100W, Polarisation: unipolar, Features of semiconductor devices: ESD protected gate, Drain current: -7A, Kind of channel: enhanced, Drain-source voltage: -160V, Type of transistor: P-MOSFET, Gate-source voltage: ±15V, Case: TO3PN, Mounting: THT, Anzahl je Verpackung: 1 Stücke.