NTE2999 NTE Electronics
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 50W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220F
Gate-source voltage: ±35V
On-state resistance: 0.73Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 50W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 50W
Case: TO220F
Gate-source voltage: ±35V
On-state resistance: 0.73Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE2999 NTE Electronics
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 50W; TO220F, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 50W, Case: TO220F, Gate-source voltage: ±35V, On-state resistance: 0.73Ω, Mounting: THT, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE2999
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NTE2999 | Hersteller : NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 50W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 40A Power dissipation: 50W Case: TO220F Gate-source voltage: ±35V On-state resistance: 0.73Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |