NTE312

NTE312 NTE Electronics, Inc


nte312.pdf Hersteller: NTE Electronics, Inc
Description: JFET N-CH 30V TO92
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Breakdown (V(BR)GSS): 30 V
Supplier Device Package: TO-92
Part Status: Active
Power - Max: 360 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 mA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
auf Bestellung 438 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.68 EUR
10+ 4.45 EUR
20+ 4.21 EUR
50+ 3.98 EUR
100+ 3.87 EUR
Mindestbestellmenge: 6
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Technische Details NTE312 NTE Electronics, Inc

Description: JFET N-CH 30V TO92, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V, Voltage - Breakdown (V(BR)GSS): 30 V, Supplier Device Package: TO-92, Part Status: Active, Power - Max: 360 mW, Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 mA, Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V.

Weitere Produktangebote NTE312

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTE312 NTE312 Hersteller : NTE Electronics nte312.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 15mA; 0.36W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15mA
Power dissipation: 0.36W
Case: TO92
Gate-source voltage: -30V
Mounting: THT
Kind of package: bulk
Gate current: 50mA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTE312 NTE312 Hersteller : NTE Electronics nte312.pdf Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 15mA; 0.36W; TO92; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15mA
Power dissipation: 0.36W
Case: TO92
Gate-source voltage: -30V
Mounting: THT
Kind of package: bulk
Gate current: 50mA
Produkt ist nicht verfügbar