NTE3310 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: IGBT-N-CHAN ENHANCEMENT
Packaging: Bag
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 15A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 400ns/500ns
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 100 W
auf Bestellung 119 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 32.34 EUR |
| 10+ | 30.73 EUR |
| 20+ | 29.12 EUR |
| 50+ | 27.48 EUR |
| 100+ | 26.86 EUR |
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Technische Details NTE3310 NTE Electronics, Inc
Description: IGBT-N-CHAN ENHANCEMENT, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 15A, Supplier Device Package: TO-3P, Td (on/off) @ 25°C: 400ns/500ns, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 100 W.
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Verfügbarkeit |
Preis ohne MwSt |
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NTE3310 | Hersteller : NTE Electronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 100W; TO3P Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 100W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Turn-on time: 0.4µs Turn-off time: 0.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE3310 | Hersteller : NTE Electronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 15A; 100W; TO3P Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 15A Power dissipation: 100W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 30A Mounting: THT Turn-on time: 0.4µs Turn-off time: 0.5µs |
Produkt ist nicht verfügbar |