NTE3323 NTE Electronics
Hersteller: NTE ElectronicsCategory: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 200W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Turn-on time: 0.4µs
Turn-off time: 0.8µs
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 30.79 EUR |
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Technische Details NTE3323 NTE Electronics
Description: IGBT-1200V 25AMP, Packaging: Bag, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A, Supplier Device Package: TO-3P, Td (on/off) @ 25°C: 400ns/800ns, Part Status: Active, Current - Collector (Ic) (Max): 25 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 200 W.
Weitere Produktangebote NTE3323 nach Preis ab 30.79 EUR bis 75.71 EUR
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NTE3323 | Hersteller : NTE Electronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 200W; TO3P Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 200W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 50A Mounting: THT Turn-on time: 0.4µs Turn-off time: 0.8µs |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE3323 | Hersteller : NTE Electronics, Inc |
Description: IGBT-1200V 25AMP Packaging: Bag Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 400ns/800ns Part Status: Active Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 50 A Power - Max: 200 W |
auf Bestellung 57 Stücke: Lieferzeit 21-28 Tag (e) |
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