NTE464

NTE464 NTE Electronics, Inc


nte464.pdf Hersteller: NTE Electronics, Inc
Description: MOSFET-P CHANNEL AMP/SW
Packaging: Bag
Package / Case: TO-72-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A
Rds On (Max) @ Id, Vgs: 600Ohm @ 0A, 10V
FET Feature: Standard
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 5V @ 10A
Supplier Device Package: TO-72
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 25 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V
auf Bestellung 40 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+46.38 EUR
10+ 44.07 EUR
20+ 41.76 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details NTE464 NTE Electronics, Inc

Description: MOSFET-P CHANNEL AMP/SW, Packaging: Bag, Package / Case: TO-72-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A, Rds On (Max) @ Id, Vgs: 600Ohm @ 0A, 10V, FET Feature: Standard, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 5V @ 10A, Supplier Device Package: TO-72, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 25 V, Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 10 V.

Weitere Produktangebote NTE464

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTE464 Hersteller : NTE Electronics nte464.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.3A; 800mW; TO72
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -300mA
Power dissipation: 0.8W
Case: TO72
Gate-source voltage: ±30V
On-state resistance: 600Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTE464 Hersteller : NTE Electronics nte464.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -0.3A; 800mW; TO72
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -25V
Drain current: -300mA
Power dissipation: 0.8W
Case: TO72
Gate-source voltage: ±30V
On-state resistance: 600Ω
Mounting: THT
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar