NTE4903 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: TVS DIODE 5.5VWM 10.8VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 5.5V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Description: TVS DIODE 5.5VWM 10.8VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 139A
Voltage - Reverse Standoff (Typ): 5.5V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
auf Bestellung 3209 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.41 EUR |
10+ | 8.94 EUR |
20+ | 8.48 EUR |
50+ | 8.01 EUR |
100+ | 7.8 EUR |
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Technische Details NTE4903 NTE Electronics, Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 6.8V; 143A; bidirectional; Ø9,52x5,21mm; 1.5kW, Mounting: THT, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Case: Ø9,52x5,21mm, Max. off-state voltage: 5.5V, Semiconductor structure: bidirectional, Max. forward impulse current: 143A, Breakdown voltage: 6.8V, Leakage current: 1mA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE4903
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE4903 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 6.8V; 143A; bidirectional; Ø9,52x5,21mm; 1.5kW Mounting: THT Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: Ø9,52x5,21mm Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Max. forward impulse current: 143A Breakdown voltage: 6.8V Leakage current: 1mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE4903 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 6.8V; 143A; bidirectional; Ø9,52x5,21mm; 1.5kW Mounting: THT Type of diode: TVS Peak pulse power dissipation: 1.5kW Case: Ø9,52x5,21mm Max. off-state voltage: 5.5V Semiconductor structure: bidirectional Max. forward impulse current: 143A Breakdown voltage: 6.8V Leakage current: 1mA |
Produkt ist nicht verfügbar |