NTE4927 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: TVS DIODE 15.3VWM 25.2VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Part Status: Active
Description: TVS DIODE 15.3VWM 25.2VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 59.5A
Voltage - Reverse Standoff (Typ): 15.3V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.2V
Part Status: Active
auf Bestellung 253 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.41 EUR |
10+ | 8.94 EUR |
20+ | 8.48 EUR |
50+ | 8.01 EUR |
100+ | 7.8 EUR |
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Technische Details NTE4927 NTE Electronics, Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 18V; 59.5A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 15.3V, Breakdown voltage: 18V, Max. forward impulse current: 59.5A, Semiconductor structure: bidirectional, Case: Ø9,52x5,21mm, Mounting: THT, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE4927
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE4927 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18V; 59.5A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE4927 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18V; 59.5A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Semiconductor structure: bidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA |
Produkt ist nicht verfügbar |