NTE4939

NTE4939 NTE Electronics, Inc


nte4903_99.pdf Hersteller: NTE Electronics, Inc
Description: TVS DIODE 28.2VWM 45.7VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Part Status: Active
auf Bestellung 78 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.98 EUR
10+ 3.77 EUR
20+ 3.59 EUR
50+ 3.38 EUR
Mindestbestellmenge: 7
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Technische Details NTE4939 NTE Electronics, Inc

Category: Bidirectional THT transil diodes, Description: Diode: TVS; 33V; 33A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Breakdown voltage: 33V, Max. forward impulse current: 33A, Peak pulse power dissipation: 1.5kW, Semiconductor structure: bidirectional, Mounting: THT, Case: Ø9,52x5,21mm, Max. off-state voltage: 28.2V, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.

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NTE4939 Hersteller : NTE Electronics nte4903_99.pdf Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33V; 33A; bidirectional; Ø9,52x5,21mm; 1.5kW
Type of diode: TVS
Breakdown voltage: 33V
Max. forward impulse current: 33A
Peak pulse power dissipation: 1.5kW
Semiconductor structure: bidirectional
Mounting: THT
Case: Ø9,52x5,21mm
Max. off-state voltage: 28.2V
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTE4939 Hersteller : NTE Electronics nte4903_99.pdf Category: Bidirectional THT transil diodes
Description: Diode: TVS; 33V; 33A; bidirectional; Ø9,52x5,21mm; 1.5kW
Type of diode: TVS
Breakdown voltage: 33V
Max. forward impulse current: 33A
Peak pulse power dissipation: 1.5kW
Semiconductor structure: bidirectional
Mounting: THT
Case: Ø9,52x5,21mm
Max. off-state voltage: 28.2V
Leakage current: 5µA
Produkt ist nicht verfügbar