NTE4939 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: TVS DIODE 28.2VWM 45.7VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Part Status: Active
Description: TVS DIODE 28.2VWM 45.7VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 28.2V
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Part Status: Active
auf Bestellung 78 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.98 EUR |
10+ | 3.77 EUR |
20+ | 3.59 EUR |
50+ | 3.38 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTE4939 NTE Electronics, Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 33V; 33A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Breakdown voltage: 33V, Max. forward impulse current: 33A, Peak pulse power dissipation: 1.5kW, Semiconductor structure: bidirectional, Mounting: THT, Case: Ø9,52x5,21mm, Max. off-state voltage: 28.2V, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE4939
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
NTE4939 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 33V; 33A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Breakdown voltage: 33V Max. forward impulse current: 33A Peak pulse power dissipation: 1.5kW Semiconductor structure: bidirectional Mounting: THT Case: Ø9,52x5,21mm Max. off-state voltage: 28.2V Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
NTE4939 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 33V; 33A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Breakdown voltage: 33V Max. forward impulse current: 33A Peak pulse power dissipation: 1.5kW Semiconductor structure: bidirectional Mounting: THT Case: Ø9,52x5,21mm Max. off-state voltage: 28.2V Leakage current: 5µA |
Produkt ist nicht verfügbar |