NTE4967 NTE Electronics
Hersteller: NTE ElectronicsCategory: Bidirectional THT transil diodes
Description: Diode: TVS; 100V; 11A; bidirectional; Ø9,52x5,21mm; 1.5kW
Type of diode: TVS
Case: Ø9,52x5,21mm
Mounting: THT
Semiconductor structure: bidirectional
Leakage current: 5µA
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 85.5V
Max. forward impulse current: 11A
Breakdown voltage: 100V
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE4967 NTE Electronics
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 100V; 11A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Case: Ø9,52x5,21mm, Mounting: THT, Semiconductor structure: bidirectional, Leakage current: 5µA, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 85.5V, Max. forward impulse current: 11A, Breakdown voltage: 100V, Anzahl je Verpackung: 1 Stücke.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE4967 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 100V; 11A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Case: Ø9,52x5,21mm Mounting: THT Semiconductor structure: bidirectional Leakage current: 5µA Peak pulse power dissipation: 1.5kW Max. off-state voltage: 85.5V Max. forward impulse current: 11A Breakdown voltage: 100V |
Produkt ist nicht verfügbar |