NTE4970 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: TVS DIODE 102VWM 165VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Description: TVS DIODE 102VWM 165VC
Packaging: Bag
Operating Temperature: -65°C ~ 175°C
Current - Peak Pulse (10/1000µs): 9.1A
Voltage - Reverse Standoff (Typ): 102V
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
auf Bestellung 1676 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.43 EUR |
10+ | 3.25 EUR |
20+ | 3.09 EUR |
50+ | 2.91 EUR |
100+ | 2.86 EUR |
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Technische Details NTE4970 NTE Electronics, Inc
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; Ø9,52x5,21mm, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Max. off-state voltage: 102V, Breakdown voltage: 120V, Max. forward impulse current: 9.1A, Semiconductor structure: unidirectional, Case: Ø9,52x5,21mm, Mounting: THT, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE4970
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE4970 | Hersteller : NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; Ø9,52x5,21mm Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 9.1A Semiconductor structure: unidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE4970 | Hersteller : NTE Electronics |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 120V; 9.1A; unidirectional; Ø9,52x5,21mm Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 102V Breakdown voltage: 120V Max. forward impulse current: 9.1A Semiconductor structure: unidirectional Case: Ø9,52x5,21mm Mounting: THT Leakage current: 5µA |
Produkt ist nicht verfügbar |