NTE4973 NTE Electronics
Hersteller: NTE Electronics
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 130V; 8.4A; bidirectional; Ø9,52x5,21mm; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: Ø9,52x5,21mm
Max. off-state voltage: 111V
Semiconductor structure: bidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130V
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 130V; 8.4A; bidirectional; Ø9,52x5,21mm; 1.5kW
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: Ø9,52x5,21mm
Max. off-state voltage: 111V
Semiconductor structure: bidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130V
Leakage current: 5µA
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE4973 NTE Electronics
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 130V; 8.4A; bidirectional; Ø9,52x5,21mm; 1.5kW, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Mounting: THT, Case: Ø9,52x5,21mm, Max. off-state voltage: 111V, Semiconductor structure: bidirectional, Max. forward impulse current: 8.4A, Breakdown voltage: 130V, Leakage current: 5µA, Anzahl je Verpackung: 1 Stücke.
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NTE4973 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 130V; 8.4A; bidirectional; Ø9,52x5,21mm; 1.5kW Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: Ø9,52x5,21mm Max. off-state voltage: 111V Semiconductor structure: bidirectional Max. forward impulse current: 8.4A Breakdown voltage: 130V Leakage current: 5µA |
Produkt ist nicht verfügbar |