Technische Details NTE4981 NTE Electronics, Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 180V; 6.1A; bidirectional; Ø9,52x5,21mm; 1.5kW, Max. off-state voltage: 154V, Semiconductor structure: bidirectional, Max. forward impulse current: 6.1A, Breakdown voltage: 180V, Leakage current: 5µA, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Mounting: THT, Case: Ø9,52x5,21mm, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE4981
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE4981 | Hersteller : NTE Electronics |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 180V; 6.1A; bidirectional; Ø9,52x5,21mm; 1.5kW Max. off-state voltage: 154V Semiconductor structure: bidirectional Max. forward impulse current: 6.1A Breakdown voltage: 180V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: Ø9,52x5,21mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE4981 | Hersteller : NTE Electronics |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 180V; 6.1A; bidirectional; Ø9,52x5,21mm; 1.5kW Max. off-state voltage: 154V Semiconductor structure: bidirectional Max. forward impulse current: 6.1A Breakdown voltage: 180V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: Ø9,52x5,21mm |
Produkt ist nicht verfügbar |