NTE555

NTE555 NTE Electronics, Inc


nte555.pdf Hersteller: NTE Electronics, Inc
Description: D-PIN VHF BAND SW
Packaging: Bag
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 50V
Part Status: Active
Power Dissipation (Max): 400 mW
auf Bestellung 21 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.99 EUR
10+ 4.73 EUR
20+ 4.5 EUR
Mindestbestellmenge: 6
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Technische Details NTE555 NTE Electronics, Inc

Category: THT Schottky diodes, Description: Diode: Schottky switching; THT; 50V; 10mA; 400mW; Ufmax: 1.2V, Mounting: THT, Power dissipation: 0.4W, Type of diode: Schottky switching, Features of semiconductor devices: PIN; RF, Capacitance: 0.1pF, Max. off-state voltage: 50V, Max. forward voltage: 1.2V, Load current: 10mA, Semiconductor structure: single diode, Leakage current: 0.2µA, Anzahl je Verpackung: 1 Stücke.

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NTE555 Hersteller : NTE Electronics nte555.pdf Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 50V; 10mA; 400mW; Ufmax: 1.2V
Mounting: THT
Power dissipation: 0.4W
Type of diode: Schottky switching
Features of semiconductor devices: PIN; RF
Capacitance: 0.1pF
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 10mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
NTE555 Hersteller : NTE Electronics nte555.pdf Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 50V; 10mA; 400mW; Ufmax: 1.2V
Mounting: THT
Power dissipation: 0.4W
Type of diode: Schottky switching
Features of semiconductor devices: PIN; RF
Capacitance: 0.1pF
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 10mA
Semiconductor structure: single diode
Leakage current: 0.2µA
Produkt ist nicht verfügbar