NTE555 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: D-PIN VHF BAND SW
Packaging: Bag
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 50V
Part Status: Active
Power Dissipation (Max): 400 mW
Description: D-PIN VHF BAND SW
Packaging: Bag
Package / Case: Axial
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 50V
Part Status: Active
Power Dissipation (Max): 400 mW
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.99 EUR |
10+ | 4.73 EUR |
20+ | 4.5 EUR |
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Technische Details NTE555 NTE Electronics, Inc
Category: THT Schottky diodes, Description: Diode: Schottky switching; THT; 50V; 10mA; 400mW; Ufmax: 1.2V, Mounting: THT, Power dissipation: 0.4W, Type of diode: Schottky switching, Features of semiconductor devices: PIN; RF, Capacitance: 0.1pF, Max. off-state voltage: 50V, Max. forward voltage: 1.2V, Load current: 10mA, Semiconductor structure: single diode, Leakage current: 0.2µA, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE555
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE555 | Hersteller : NTE Electronics |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 50V; 10mA; 400mW; Ufmax: 1.2V Mounting: THT Power dissipation: 0.4W Type of diode: Schottky switching Features of semiconductor devices: PIN; RF Capacitance: 0.1pF Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 10mA Semiconductor structure: single diode Leakage current: 0.2µA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE555 | Hersteller : NTE Electronics |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 50V; 10mA; 400mW; Ufmax: 1.2V Mounting: THT Power dissipation: 0.4W Type of diode: Schottky switching Features of semiconductor devices: PIN; RF Capacitance: 0.1pF Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 10mA Semiconductor structure: single diode Leakage current: 0.2µA |
Produkt ist nicht verfügbar |