NTE575 NTE Electronics
Hersteller: NTE Electronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; Ufmax: 1.5V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 1.5V
Leakage current: 50µA
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; Ufmax: 1.5V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 35A
Case: DO41
Max. forward voltage: 1.5V
Leakage current: 50µA
Reverse recovery time: 70ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
65+ | 1.1 EUR |
88+ | 0.82 EUR |
100+ | 0.72 EUR |
112+ | 0.64 EUR |
117+ | 0.61 EUR |
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Technische Details NTE575 NTE Electronics
Description: DIODE GEN PURP 1KV 1A DO41, Packaging: Bag, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 70 ns, Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-41, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A, Current - Reverse Leakage @ Vr: 50 µA @ 1000 V.
Weitere Produktangebote NTE575 nach Preis ab 0.61 EUR bis 1.61 EUR
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NTE575 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 35A; DO41; Ufmax: 1.5V; Ir: 50uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 35A Case: DO41 Max. forward voltage: 1.5V Leakage current: 50µA Reverse recovery time: 70ns |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE575 | Hersteller : NTE Electronics, Inc |
Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Bag Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 1000 V |
auf Bestellung 12635 Stücke: Lieferzeit 21-28 Tag (e) |
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NTE575 | Hersteller : NTE Electronics, Inc. | Rectifier Diode Switching 1KV 1A 70ns 2-Pin DO-41 |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |