NTE5800 NTE Electronics, Inc
Hersteller: NTE Electronics, IncDescription: DIODE GEN PURP 50V 3A DO27
Packaging: Bag
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9.4 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 13832 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 0.78 EUR |
| 40+ | 0.74 EUR |
| 60+ | 0.7 EUR |
| 80+ | 0.66 EUR |
| 100+ | 0.65 EUR |
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Technische Details NTE5800 NTE Electronics, Inc
Description: DIODE GEN PURP 50V 3A DO27, Packaging: Bag, Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-27, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9.4 A, Current - Reverse Leakage @ Vr: 500 µA @ 50 V.
Weitere Produktangebote NTE5800
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NTE5800 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO27; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.2V Leakage current: 0.5mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE5800 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ifsm: 200A; DO27; Ufmax: 1.2V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 200A Case: DO27 Max. forward voltage: 1.2V Leakage current: 0.5mA |
Produkt ist nicht verfügbar |