Technische Details NTE5812 NTE Electronics, Inc
Category: THT universal diodes, Description: Diode: rectifying; THT; 100V; 6A; Ifsm: 400A; Ufmax: 1V; Ir: 1mA, Mounting: THT, Max. off-state voltage: 100V, Load current: 6A, Semiconductor structure: single diode, Leakage current: 1mA, Capacitance: 150pF, Type of diode: rectifying, Max. forward impulse current: 0.4kA, Max. forward voltage: 1V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE5812
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTE5812 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 6A; Ifsm: 400A; Ufmax: 1V; Ir: 1mA Mounting: THT Max. off-state voltage: 100V Load current: 6A Semiconductor structure: single diode Leakage current: 1mA Capacitance: 150pF Type of diode: rectifying Max. forward impulse current: 0.4kA Max. forward voltage: 1V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE5812 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 6A; Ifsm: 400A; Ufmax: 1V; Ir: 1mA Mounting: THT Max. off-state voltage: 100V Load current: 6A Semiconductor structure: single diode Leakage current: 1mA Capacitance: 150pF Type of diode: rectifying Max. forward impulse current: 0.4kA Max. forward voltage: 1V |
Produkt ist nicht verfügbar |