NTE583 NTE Electronics
Hersteller: NTE Electronics
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 70V; 15mA; DO35; Ufmax: 1V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 15mA
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2pF
Max. forward voltage: 1V
Case: DO35
Max. forward impulse current: 50mA
Anzahl je Verpackung: 1 Stücke
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 70V; 15mA; DO35; Ufmax: 1V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 70V
Load current: 15mA
Semiconductor structure: single diode
Features of semiconductor devices: RF
Capacitance: 2pF
Max. forward voltage: 1V
Case: DO35
Max. forward impulse current: 50mA
Anzahl je Verpackung: 1 Stücke
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Technische Details NTE583 NTE Electronics
Category: THT Schottky diodes, Description: Diode: Schottky switching; THT; 70V; 15mA; DO35; Ufmax: 1V, Type of diode: Schottky switching, Mounting: THT, Max. off-state voltage: 70V, Load current: 15mA, Semiconductor structure: single diode, Features of semiconductor devices: RF, Capacitance: 2pF, Max. forward voltage: 1V, Case: DO35, Max. forward impulse current: 50mA, Anzahl je Verpackung: 1 Stücke.
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NTE583 | Hersteller : NTE Electronics |
Category: THT Schottky diodes Description: Diode: Schottky switching; THT; 70V; 15mA; DO35; Ufmax: 1V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 70V Load current: 15mA Semiconductor structure: single diode Features of semiconductor devices: RF Capacitance: 2pF Max. forward voltage: 1V Case: DO35 Max. forward impulse current: 50mA |
Produkt ist nicht verfügbar |