NTE6165 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GEN PURP 1.6KV 150A DO8
Packaging: Bag
Package / Case: DO-203AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
Description: DIODE GEN PURP 1.6KV 150A DO8
Packaging: Bag
Package / Case: DO-203AA, DO-8, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 150A
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 5 mA @ 1600 V
auf Bestellung 11 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 208.21 EUR |
10+ | 197.81 EUR |
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Technische Details NTE6165 NTE Electronics, Inc
Description: DIODE GEN PURP 1.6KV 150A DO8, Packaging: Bag, Package / Case: DO-203AA, DO-8, Stud, Mounting Type: Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 150A, Supplier Device Package: DO-8, Operating Temperature - Junction: -65°C ~ 190°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A, Current - Reverse Leakage @ Vr: 5 mA @ 1600 V.
Weitere Produktangebote NTE6165
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTE6165 | Hersteller : NTE Electronics | NTE6165 Stud mounting universal diodes |
Produkt ist nicht verfügbar |