Technische Details NTE636 NTE Electronics, Inc
Category: THT universal diodes, Description: Diode: rectifying; THT; 600V; 1.6A; Ifsm: 40A; SOD57; Ufmax: 1V; 50ns, Type of diode: rectifying, Mounting: THT, Max. off-state voltage: 0.6kV, Load current: 1.6A, Max. load current: 16A, Reverse recovery time: 50ns, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 65pF, Max. forward voltage: 1V, Case: SOD57, Leakage current: 0.15mA, Max. forward impulse current: 40A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote NTE636
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NTE636 | Hersteller : NTE Electronics |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1.6A; Ifsm: 40A; SOD57; Ufmax: 1V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1.6A Max. load current: 16A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 65pF Max. forward voltage: 1V Case: SOD57 Leakage current: 0.15mA Max. forward impulse current: 40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTE636 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1.6A; Ifsm: 40A; SOD57; Ufmax: 1V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1.6A Max. load current: 16A Reverse recovery time: 50ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 65pF Max. forward voltage: 1V Case: SOD57 Leakage current: 0.15mA Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |