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NTLJS2103PTBG

NTLJS2103PTBG onsemi

ntljs2103p-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.56 EUR
Mindestbestellmenge: 3000
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Technische Details NTLJS2103PTBG onsemi

Description: MOSFET P-CH 12V 3.5A 6WDFN, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: 6-WDFN (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V.

Weitere Produktangebote NTLJS2103PTBG nach Preis ab 0.51 EUR bis 1.5 EUR

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NTLJS2103PTBG NTLJS2103PTBG Hersteller : onsemi ntljs2103p-d.pdf Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.29 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 18
NTLJS2103PTBG NTLJS2103PTBG Hersteller : onsemi NTLJS2103P_D-2318971.pdf MOSFET PFET WDFN6 12V 5.9A 0.025
auf Bestellung 40835 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.5 EUR
41+ 1.3 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
3000+ 0.51 EUR
Mindestbestellmenge: 35
NTLJS2103PTBG Hersteller : ON Semiconductor ntljs2103p-d.pdf
auf Bestellung 69000 Stücke:
Lieferzeit 21-28 Tag (e)
NTLJS2103PTBG NTLJS2103PTBG Hersteller : ON Semiconductor ntljs2103p-d.pdf Trans MOSFET P-CH 12V 5.9A 6-Pin WDFN T/R
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