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NTMS4937NR2G

NTMS4937NR2G onsemi

ntms4937n-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 8.6A 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
auf Bestellung 191045 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
419+1.73 EUR
Mindestbestellmenge: 419
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Technische Details NTMS4937NR2G onsemi

Description: MOSFET N-CH 30V 8.6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V, Power Dissipation (Max): 810mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V.

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NTMS4937NR2G NTMS4937NR2G Hersteller : ON Semiconductor NTMS4937N_D-2319145.pdf MOSFET Power MOSFET 30V 112A 6.5 mOhm Single
auf Bestellung 2477 Stücke:
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NTMS4937NR2G Hersteller : ON Semiconductor ntms4937n-d.pdf
auf Bestellung 1255 Stücke:
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NTMS4937NR2G NTMS4937NR2G Hersteller : onsemi ntms4937n-d.pdf Description: MOSFET N-CH 30V 8.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
Produkt ist nicht verfügbar
NTMS4937NR2G NTMS4937NR2G Hersteller : onsemi ntms4937n-d.pdf Description: MOSFET N-CH 30V 8.6A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 7.5A, 10V
Power Dissipation (Max): 810mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2563 pF @ 25 V
Produkt ist nicht verfügbar