auf Bestellung 1500 Stücke:
Lieferzeit 451-465 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.25 EUR |
| 18+ | 2.94 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.48 EUR |
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Technische Details NVTFS4C08NTAG onsemi
Description: MOSFET N-CH 30V 17A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V, Power Dissipation (Max): 3.1W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS4C08NTAG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NVTFS4C08NTAG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 30V 55A Automotive AEC-Q101 8-Pin WDFN EP T/R |
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NVTFS4C08NTAG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 30V 55A Automotive AEC-Q101 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NVTFS4C08NTAG | Hersteller : onsemi |
Description: MOSFET N-CH 30V 17A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFS4C08NTAG | Hersteller : onsemi |
Description: MOSFET N-CH 30V 17A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 30A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1113 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |