NX3008CBKV,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N/P-CH 30V 0.4A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-666
Part Status: Not For New Designs
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.22 EUR |
| 12000+ | 0.19 EUR |
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Technische Details NX3008CBKV,115 Nexperia USA Inc.
Description: MOSFET N/P-CH 30V 0.4A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-666, Part Status: Not For New Designs, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NX3008CBKV,115 nach Preis ab 0.18 EUR bis 1.02 EUR
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NX3008CBKV,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N/P-CH 30V 0.4A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA, 220mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-666 Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q101 |
auf Bestellung 14177 Stücke: Lieferzeit 21-28 Tag (e) |
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NX3008CBKV,115 | Hersteller : Nexperia |
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auf Bestellung 6851 Stücke: Lieferzeit 14-28 Tag (e) |
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NX3008CBKV,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - NX3008CBKV,115 - Dual-MOSFET, Komplementärer n- und p-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 400mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 400mA Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 330mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Anzahl der Pins: 6Pins Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 330mW Betriebstemperatur, max.: 150°C |
auf Bestellung 7380 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3008CBKV,115 | Hersteller : NEXPERIA |
Trans MOSFET N/P-CH 30V 0.22A Automotive 6-Pin SOT-666 T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3008CBKV,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 0.4/-0.22A; 1.09W Mounting: SMD Kind of package: reel; tape Gate charge: 0.68/0.72nC Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT666 Drain-source voltage: 30/-30V Drain current: 0.4/-0.22A On-state resistance: 1.4/4.1Ω Type of transistor: N/P-MOSFET Power dissipation: 1.09W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NX3008CBKV,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 0.4/-0.22A; 1.09W Mounting: SMD Kind of package: reel; tape Gate charge: 0.68/0.72nC Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT666 Drain-source voltage: 30/-30V Drain current: 0.4/-0.22A On-state resistance: 1.4/4.1Ω Type of transistor: N/P-MOSFET Power dissipation: 1.09W Polarisation: unipolar |
Produkt ist nicht verfügbar |