NX3020NAKV,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
Description: MOSFET 2N-CH 30V 0.2A SOT666
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-666
auf Bestellung 380000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.2 EUR |
12000+ | 0.18 EUR |
28000+ | 0.17 EUR |
100000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NX3020NAKV,115 Nexperia USA Inc.
Description: NEXPERIA - NX3020NAKV,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 200 mA, 200 mA, 2.7 ohm, tariffCode: 85412100, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30, rohsCompliant: YES, Dauer-Drainstrom Id: 200, Dauer-Drainstrom Id, p-Kanal: 200, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 200, Drain-Source-Durchgangswiderstand, p-Kanal: 2.7, Verlustleistung Pd: 375, Gate-Source-Schwellenspannung, max.: 1.2, Verlustleistung, p-Kanal: 375, Drain-Source-Spannung Vds, n-Kanal: 30, euEccn: NLR, Bauform - Transistor: SOT-666, Anzahl der Pins: 6, Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 2.7, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 375, Betriebswiderstand, Rds(on): 2.7, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote NX3020NAKV,115 nach Preis ab 0.091 EUR bis 0.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NX3020NAKV,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.12A Pulsed drain current: 0.8A Power dissipation: 375mW Case: SOT666 Gate-source voltage: ±20V On-state resistance: 9.2Ω Mounting: SMD Gate charge: 0.44nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3725 Stücke: Lieferzeit 7-14 Tag (e) |
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NX3020NAKV,115 | Hersteller : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 120mA; Idm: 0.8A; 375mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.12A Pulsed drain current: 0.8A Power dissipation: 375mW Case: SOT666 Gate-source voltage: ±20V On-state resistance: 9.2Ω Mounting: SMD Gate charge: 0.44nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3725 Stücke: Lieferzeit 14-21 Tag (e) |
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NX3020NAKV,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 30V 0.2A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 13pF @ 10V Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.44nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-666 |
auf Bestellung 383966 Stücke: Lieferzeit 21-28 Tag (e) |
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NX3020NAKV,115 | Hersteller : Nexperia | MOSFET NRND for Automotive Applications NX3020NAKV/SOT666/SOT6 |
auf Bestellung 14435 Stücke: Lieferzeit 14-28 Tag (e) |
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NX3020NAKV,115 | Hersteller : NEXPERIA |
Description: NEXPERIA - NX3020NAKV,115 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 200 mA, 200 mA, 2.7 ohm tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30 rohsCompliant: YES Dauer-Drainstrom Id: 200 Dauer-Drainstrom Id, p-Kanal: 200 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 200 Drain-Source-Durchgangswiderstand, p-Kanal: 2.7 Verlustleistung Pd: 375 Gate-Source-Schwellenspannung, max.: 1.2 Verlustleistung, p-Kanal: 375 Drain-Source-Spannung Vds, n-Kanal: 30 euEccn: NLR Bauform - Transistor: SOT-666 Anzahl der Pins: 6 Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 2.7 productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 375 Betriebswiderstand, Rds(on): 2.7 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 150 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |