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NX6008NBKR

NX6008NBKR Nexperia USA Inc.

NX6008NBK.pdf Hersteller: Nexperia USA Inc.
Description: NX6008NBK/SOT23/TO-236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
auf Bestellung 42000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.089 EUR
6000+ 0.084 EUR
9000+ 0.071 EUR
30000+ 0.066 EUR
Mindestbestellmenge: 3000
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Produktbewertung abgeben

Technische Details NX6008NBKR Nexperia USA Inc.

Description: NX6008NBK/SOT23/TO-236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V, Power Dissipation (Max): 270mW (Ta), 1.3W (Tc), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TO-236AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V.

Weitere Produktangebote NX6008NBKR nach Preis ab 0.052 EUR bis 0.51 EUR

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Preis ohne MwSt
NX6008NBKR NX6008NBKR Hersteller : Nexperia USA Inc. NX6008NBK.pdf Description: NX6008NBK/SOT23/TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
auf Bestellung 44436 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
72+ 0.36 EUR
133+ 0.2 EUR
500+ 0.15 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 53
NX6008NBKR NX6008NBKR Hersteller : Nexperia NX6008NBK.pdf MOSFET NX6008NBK/SOT23/TO-236AB
auf Bestellung 35665 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
103+0.51 EUR
152+ 0.34 EUR
334+ 0.16 EUR
1000+ 0.091 EUR
3000+ 0.078 EUR
24000+ 0.073 EUR
45000+ 0.052 EUR
Mindestbestellmenge: 103
NX6008NBKR Hersteller : NEXPERIA nx6008nbk.pdf Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
NX6008NBKR NX6008NBKR Hersteller : Nexperia nx6008nbk.pdf Trans MOSFET N-CH 60V 0.27A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar