NX7002BKXBZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.26A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 260mA
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.26A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 260mA
Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.19 EUR |
10000+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NX7002BKXBZ Nexperia USA Inc.
Description: NEXPERIA - NX7002BKXBZ - Dual-MOSFET, n-Kanal, 60 V, 60 V, 260 mA, 260 mA, 2.2 ohm, tariffCode: 85412100, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 260mA, Dauer-Drainstrom Id, p-Kanal: 260mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 260mA, Drain-Source-Durchgangswiderstand, p-Kanal: 2.2ohm, Verlustleistung, p-Kanal: 285mW, euEccn: NLR, Bauform - Transistor: DFN1010B, Anzahl der Pins: 6Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 2.2ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 285mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote NX7002BKXBZ nach Preis ab 0.14 EUR bis 1.11 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NX7002BKXBZ | Hersteller : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 0.26A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 260mA Input Capacitance (Ciss) (Max) @ Vds: 23.6pF @ 10V Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: DFN1010B-6 Part Status: Active |
auf Bestellung 22400 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
NX7002BKXBZ | Hersteller : Nexperia | MOSFET NX7002BKXB/SOT1216/DFN1010B-6 |
auf Bestellung 52413 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
NX7002BKXBZ | Hersteller : NEXPERIA |
Description: NEXPERIA - NX7002BKXBZ - Dual-MOSFET, n-Kanal, 60 V, 60 V, 260 mA, 260 mA, 2.2 ohm tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 260mA Dauer-Drainstrom Id, p-Kanal: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 260mA Drain-Source-Durchgangswiderstand, p-Kanal: 2.2ohm Verlustleistung, p-Kanal: 285mW euEccn: NLR Bauform - Transistor: DFN1010B Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 2.2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 285mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
NX7002BKXBZ | Hersteller : NEXPERIA |
Description: NEXPERIA - NX7002BKXBZ - Dual-MOSFET, n-Kanal, 60 V, 60 V, 260 mA, 260 mA, 2.2 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 260mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 260mA Drain-Source-Durchgangswiderstand, p-Kanal: 2.2ohm Verlustleistung, p-Kanal: 285mW euEccn: NLR Drain-Source-Durchgangswiderstand, n-Kanal: 2.2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 285mW SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
NX7002BKXBZ | Hersteller : NEXPERIA | Trans MOSFET N-CH 60V 0.26A 6-Pin DFN-B EP T/R |
Produkt ist nicht verfügbar |