Technische Details P4SMA170CA LITTELFUSE
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 400W; 170V; 1.7A; bidirectional; ±5%; SMA; reel,tape, Mounting: SMD, Case: SMA, Type of diode: TVS, Semiconductor structure: bidirectional, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Max. forward impulse current: 1.7A, Peak pulse power dissipation: 400W, Tolerance: ±5%, Max. off-state voltage: 145V, Breakdown voltage: 170V, Leakage current: 5µA.
Weitere Produktangebote P4SMA170CA
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
P4SMA170CA | Hersteller : Littelfuse | TVS Diode Single Bi-Dir 145V 400W 2-Pin SMA T/R |
Produkt ist nicht verfügbar |
||
P4SMA170CA | Hersteller : YANGJIE TECHNOLOGY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 170V; 1.7A; bidirectional; ±5%; SMA; reel,tape Mounting: SMD Case: SMA Type of diode: TVS Semiconductor structure: bidirectional Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward impulse current: 1.7A Peak pulse power dissipation: 400W Tolerance: ±5% Max. off-state voltage: 145V Breakdown voltage: 170V Leakage current: 5µA |
Produkt ist nicht verfügbar |
||
P4SMA170CA | Hersteller : Littelfuse Inc. | Description: TVS DIODE 145V 234V DO214AC |
Produkt ist nicht verfügbar |
||
P4SMA170CA | Hersteller : Bourns Inc. | Description: TVS DIODE 145V 234V DO214AC |
Produkt ist nicht verfügbar |
||
P4SMA170CA | Hersteller : Bourns | ESD Suppressors / TVS Diodes 170V 400W BiDir |
Produkt ist nicht verfügbar |
||
P4SMA170CA | Hersteller : Littelfuse | ESD Suppressors / TVS Diodes 145V 400W 5% Bi-directional |
Produkt ist nicht verfügbar |
||
P4SMA170CA | Hersteller : YANGJIE TECHNOLOGY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 400W; 170V; 1.7A; bidirectional; ±5%; SMA; reel,tape Mounting: SMD Case: SMA Type of diode: TVS Semiconductor structure: bidirectional Kind of package: reel; tape Features of semiconductor devices: glass passivated Max. forward impulse current: 1.7A Peak pulse power dissipation: 400W Tolerance: ±5% Max. off-state voltage: 145V Breakdown voltage: 170V Leakage current: 5µA |
Produkt ist nicht verfügbar |