P600M-E3/73 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 6A P600
Packaging: Tape & Box (TB)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
300+ | 1.71 EUR |
600+ | 1.47 EUR |
1500+ | 1.2 EUR |
2100+ | 1.13 EUR |
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Technische Details P600M-E3/73 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 6A P600, Packaging: Tape & Box (TB), Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 150pF @ 4V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V.
Weitere Produktangebote P600M-E3/73 nach Preis ab 1.33 EUR bis 2.73 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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P600M-E3/73 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 6A P600 Packaging: Cut Tape (CT) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 150pF @ 4V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 266 Stücke: Lieferzeit 21-28 Tag (e) |
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