P600S-CT Diotec Semiconductor
Hersteller: Diotec SemiconductorDescription: DIODE GEN PURP 1.2KV 6A P600
Packaging: Strip
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 1.2 V
auf Bestellung 13500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 3.63 EUR |
| 500+ | 1.92 EUR |
| 1000+ | 1.05 EUR |
| 2000+ | 1.04 EUR |
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Technische Details P600S-CT Diotec Semiconductor
Description: DIODE GEN PURP 1.2KV 6A P600, Packaging: Strip, Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 6A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A, Current - Reverse Leakage @ Vr: 10 µA @ 1.2 V.