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P6SMB10CA M4G

P6SMB10CA M4G TAIWAN SEMICONDUCTOR


Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
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Technische Details P6SMB10CA M4G TAIWAN SEMICONDUCTOR

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 8.55V, Breakdown voltage: 10V, Max. forward impulse current: 43A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: SMB, Mounting: SMD, Leakage current: 20µA, Kind of package: reel; tape, Anzahl je Verpackung: 5 Stücke.

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P6SMB10CA M4G P6SMB10CA M4G Hersteller : TAIWAN SEMICONDUCTOR Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 20µA
Kind of package: reel; tape
Produkt ist nicht verfügbar