P6SMB110CAHR5G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 2µA
Max. forward impulse current: 4.1A
Breakdown voltage: 110V
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: bidirectional
Leakage current: 2µA
Max. forward impulse current: 4.1A
Breakdown voltage: 110V
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 94V
Anzahl je Verpackung: 1 Stücke
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Technische Details P6SMB110CAHR5G TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Mounting: SMD, Tolerance: ±5%, Kind of package: reel; tape, Case: SMB, Semiconductor structure: bidirectional, Leakage current: 2µA, Max. forward impulse current: 4.1A, Breakdown voltage: 110V, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 94V, Anzahl je Verpackung: 1 Stücke.
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P6SMB110CAHR5G | Hersteller : Taiwan Semiconductor |
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P6SMB110CAHR5G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 110V; 4.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: bidirectional Leakage current: 2µA Max. forward impulse current: 4.1A Breakdown voltage: 110V Peak pulse power dissipation: 0.6kW Max. off-state voltage: 94V |
Produkt ist nicht verfügbar |