P6SMB11CA M4G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
Anzahl je Verpackung: 1 Stücke
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Mounting: SMD
Max. off-state voltage: 9.4V
Semiconductor structure: bidirectional
Case: SMB
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 40A
Peak pulse power dissipation: 0.6kW
Tolerance: ±5%
Breakdown voltage: 11V
Anzahl je Verpackung: 1 Stücke
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Technische Details P6SMB11CA M4G TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Mounting: SMD, Max. off-state voltage: 9.4V, Semiconductor structure: bidirectional, Case: SMB, Kind of package: reel; tape, Leakage current: 2µA, Max. forward impulse current: 40A, Peak pulse power dissipation: 0.6kW, Tolerance: ±5%, Breakdown voltage: 11V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P6SMB11CA M4G
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P6SMB11CA M4G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 11V; 40A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Mounting: SMD Max. off-state voltage: 9.4V Semiconductor structure: bidirectional Case: SMB Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 40A Peak pulse power dissipation: 0.6kW Tolerance: ±5% Breakdown voltage: 11V |
Produkt ist nicht verfügbar |