Produkte > TAIWAN SEMICONDUCTOR > P6SMB13CA M4G
P6SMB13CA M4G

P6SMB13CA M4G TAIWAN SEMICONDUCTOR


P6SMB_SER.pdf Hersteller: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 34A; bidirectional; ±5%; SMB; reel,tape
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 13V
Max. forward impulse current: 34A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details P6SMB13CA M4G TAIWAN SEMICONDUCTOR

Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 13V; 34A; bidirectional; ±5%; SMB; reel,tape, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 11.1V, Kind of package: reel; tape, Semiconductor structure: bidirectional, Leakage current: 1µA, Case: SMB, Type of diode: TVS, Tolerance: ±5%, Mounting: SMD, Breakdown voltage: 13V, Max. forward impulse current: 34A, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote P6SMB13CA M4G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
P6SMB13CA M4G P6SMB13CA M4G Hersteller : TAIWAN SEMICONDUCTOR P6SMB_SER.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 13V; 34A; bidirectional; ±5%; SMB; reel,tape
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 11.1V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SMB
Type of diode: TVS
Tolerance: ±5%
Mounting: SMD
Breakdown voltage: 13V
Max. forward impulse current: 34A
Produkt ist nicht verfügbar