P6SMB200A M4G TAIWAN SEMICONDUCTOR
Hersteller: TAIWAN SEMICONDUCTORCategory: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 171V
Breakdown voltage: 200V
Max. forward impulse current: 2.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
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Technische Details P6SMB200A M4G TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 171V, Breakdown voltage: 200V, Max. forward impulse current: 2.2A, Semiconductor structure: unidirectional, Tolerance: ±5%, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
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P6SMB200A M4G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |