P6SMB200CAHM4G Taiwan Semiconductor
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Technische Details P6SMB200CAHM4G Taiwan Semiconductor
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 171V, Breakdown voltage: 200V, Max. forward impulse current: 2.2A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P6SMB200CAHM4G
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P6SMB200CAHM4G | Hersteller : TAIWAN SEMICONDUCTOR |
 Category: Bidirectional SMD transil diodesDescription: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P6SMB200CAHM4G | Hersteller : Taiwan Semiconductor Corporation |
Description: TVS DIODE 171VWM 274VC DO214AA |
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P6SMB200CAHM4G | Hersteller : Taiwan Semiconductor |
ESD Suppressors / TVS Diodes 600W 200V 5% Bidirec tional TVS |
Produkt ist nicht verfügbar |
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P6SMB200CAHM4G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 200V; 2.2A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 171V Breakdown voltage: 200V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |