PBHV8115T,215 NEXPERIA
Hersteller: NEXPERIACategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; 150V; 1A; 300mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 1A
Power dissipation: 0.3W
Case: SOT23; TO236AB
Current gain: 10...250
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2920 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 200+ | 0.36 EUR |
| 261+ | 0.27 EUR |
| 364+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| 3000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBHV8115T,215 NEXPERIA
Description: TRANS NPN 150V 1A TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V, Frequency - Transition: 30MHz, Supplier Device Package: TO-236AB, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 300 mW.
Weitere Produktangebote PBHV8115T,215 nach Preis ab 0.19 EUR bis 1.07 EUR
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PBHV8115T,215 | Hersteller : NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 150V; 1A; 300mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 1A Power dissipation: 0.3W Case: SOT23; TO236AB Current gain: 10...250 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) |
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PBHV8115T,215 | Hersteller : Nexperia |
Bipolar Transistors - BJT PBHV8115T/SOT23/TO-236AB |
auf Bestellung 16363 Stücke: Lieferzeit 14-28 Tag (e) |
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PBHV8115T,215 | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN 150V 1A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Frequency - Transition: 30MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 300 mW |
auf Bestellung 2123 Stücke: Lieferzeit 21-28 Tag (e) |
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PBHV8115T,215 | Hersteller : NEXPERIA |
Description: NEXPERIA - PBHV8115T,215 - Bipolarer Einzeltransistor (BJT), NPN, 150 V, 1 A, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 1A usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 150V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 30MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 894 Stücke: Lieferzeit 14-21 Tag (e) |
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PBHV8115T,215 | Hersteller : NEXPERIA |
Description: NEXPERIA - PBHV8115T,215 - Bipolarer Einzeltransistor (BJT), NPN, 150 V, 1 A, 300 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 250hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 1A usEccn: EAR99 euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pins Kollektor-Emitter-Spannung, max.: 150V productTraceability: Yes-Date/Lot Code Übergangsfrequenz: 30MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 894 Stücke: Lieferzeit 14-21 Tag (e) |
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PBHV8115T,215 | Hersteller : NEXPERIA |
Trans GP BJT NPN 150V 1A 300mW Automotive 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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PBHV8115T,215 | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN 150V 1A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 1A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V Frequency - Transition: 30MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 300 mW |
Produkt ist nicht verfügbar |