auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 9.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PBSS4032SPN,115 NXP SEMICONDUTORS
Description: TRANS NPN/PNP 30V 5.7A/4.8A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 2.3W, Current - Collector (Ic) (Max): 5.7A, 4.8A, Voltage - Collector Emitter Breakdown (Max): 30V, Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V, Frequency - Transition: 140MHz, 115MHz, Supplier Device Package: 8-SO.
Weitere Produktangebote PBSS4032SPN,115
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
PBSS4032SPN,115 | Hersteller : NEXPERIA |
 Trans GP BJT NPN/PNP 30V 5.7A/4.8A 2300mW 8-Pin SO T/R |
Produkt ist nicht verfügbar |
|
 |
PBSS4032SPN,115 | Hersteller : Nexperia |
Trans GP BJT NPN/PNP 30V 5.7A/4.8A 2300mW 8-Pin SO T/R |
Produkt ist nicht verfügbar |
|
|
|
PBSS4032SPN,115 | Hersteller : Nexperia |
Trans GP BJT NPN/PNP 30V 5.7A/4.8A 2300mW 8-Pin SO T/R |
Produkt ist nicht verfügbar |
|
 |
PBSS4032SPN,115 | Hersteller : NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 5.7/4.8A Type of transistor: NPN / PNP Power dissipation: 2.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: complementary pair Case: SO8 Mounting: SMD Collector-emitter voltage: 30V Current gain: 150...500 Collector current: 5.7/4.8A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
PBSS4032SPN,115 | Hersteller : Nexperia USA Inc. |
Description: TRANS NPN/PNP 30V 5.7A/4.8A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: 150°C (TJ) Power - Max: 2.3W Current - Collector (Ic) (Max): 5.7A, 4.8A Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 6A / 510mV @ 250mA, 5A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2A, 2V / 150 @ 2A, 2V Frequency - Transition: 140MHz, 115MHz Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
|
 |
PBSS4032SPN,115 | Hersteller : Nexperia |
Bipolar Transistors - BJT Dual +/-30V '+5.7A -5.7A 0.73W 140MHz |
Produkt ist nicht verfügbar |
|
|
|
PBSS4032SPN,115 | Hersteller : NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 30V; 5.7/4.8A Type of transistor: NPN / PNP Power dissipation: 2.3W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: complementary pair Case: SO8 Mounting: SMD Collector-emitter voltage: 30V Current gain: 150...500 Collector current: 5.7/4.8A |
Produkt ist nicht verfügbar |