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PBSS5612PA,115

PBSS5612PA,115 NXP Semiconductors

PHGLS20771-1.pdf?t.download=true&u=5oefqw Hersteller: NXP Semiconductors
Description: NEXPERIA PBSS5612PA - SMALL SIGN
Packaging: Bulk
Package / Case: 3-PowerUDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 6A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V
Frequency - Transition: 60MHz
Supplier Device Package: 3-HUSON (2x2)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 2.1 W
auf Bestellung 99332 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2777+0.26 EUR
Mindestbestellmenge: 2777
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Technische Details PBSS5612PA,115 NXP Semiconductors

Description: NEXPERIA PBSS5612PA - SMALL SIGN, Packaging: Bulk, Package / Case: 3-PowerUDFN, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 300mA, 6A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 190 @ 2A, 2V, Frequency - Transition: 60MHz, Supplier Device Package: 3-HUSON (2x2), Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 2.1 W.

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PBSS5612PA,115 PBSS5612PA,115 Hersteller : Nexperia PBSS5612PA-1599433.pdf Bipolar Transistors - BJT 12V 6A PNP LO VCEsat TRANSISTOR
auf Bestellung 2729 Stücke:
Lieferzeit 14-28 Tag (e)