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PDTA113EMB,315

PDTA113EMB,315 Nexperia

PDTA113EMB-2938030.pdf Hersteller: Nexperia
Bipolar Transistors - Pre-Biased PDTA113EMB/SOT883B/XQFN3
auf Bestellung 9999 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
77+0.68 EUR
115+ 0.46 EUR
181+ 0.29 EUR
1000+ 0.13 EUR
2500+ 0.11 EUR
10000+ 0.086 EUR
20000+ 0.081 EUR
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Technische Details PDTA113EMB,315 Nexperia

Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Qualification: AEC-Q100.

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PDTA113EMB,315 Hersteller : NEXPERIA PHGLS24438-1.pdf?t.download=true&u=5oefqw Description: NEXPERIA - PDTA113EMB,315 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 140000 Stücke:
Lieferzeit 14-21 Tag (e)
PDTA113EMB,315 Hersteller : NXP PHGLS24438-1.pdf?t.download=true&u=5oefqw Description: NXP - PDTA113EMB,315 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 140000 Stücke:
Lieferzeit 14-21 Tag (e)
PDTA113EMB,315 PDTA113EMB,315 Hersteller : Nexperia USA Inc. PDTA113EMB.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 40mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 1 kOhms
Resistor - Emitter Base (R2): 1 kOhms
Qualification: AEC-Q100
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